Designing and Analysis of Lightweight InGaN/GaN PV Cell

Shadia Chowdhury, Md. Moidul Islam, Md. Mostafizur Rahman, Mission Kumar Debnath, Samera Hossain


This paper is an effort to analyze the performance and also increase the efficiency of InGaN/GaN solar cell. InGaN/GaN solar cell contains p and n-type layer of GaN and intrinsic layer of InGaN. The proposed structure of solar cell also contains front TCO, back TCO and back reflector. Performance of the designed solar cell was checked based on electric field, current density and electric potential generated in the designed cell. J-V curve is the most important factor to analyze the performance of the solar cell. Power conversion efficiency and fill factors have been calculated from this graph. According to the analysis of the simulation results efficiency of the designed solar cell was 12.91%. At the end, this thesis is about designing successfully with an efficient InGaN/GaN solar cell for further use in solar applications.


InxGa1-xN, GaN, InGaN/GaN, Electric Field, Electric Potential, Current Density, J-V curve, COMSOL Multiphysics.

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International Journal of Recent Contributions from Engineering, Science & IT (iJES) – eISSN: 2197-8581
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